STGFW40H65FB Description

These IGBTs were created employing cutting-edge, exclusive trench gate field-stop construction. These components are a part of the new HB series of IGBTs, which offer the best conduction and switching loss trade-offs for increasing the efficiency of any frequency converter. Additionally, the extremely narrow parameter distribution and slightly positive VCE(sat) temperature coefficient lead to safer paralleling operation.

STGFW40H65FB Features

• Maximum junction temperature: TJ = 175 °C

• High speed switching series

• Minimized tail current

• Very low saturation voltage: VCE(sat) = 1.6 V (typ) @ IC = 40 A

• Safe paralleling

• Tight parameter distribution

• Low thermal resistance

STGFW40H65FB Applications

• Power Management

• Consumer Electronics

• Portable Devices

• Industrial