STGWT80V60DF Description

This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.

STGWT80V60DF Features

Maximum junction temperature: TJ = 175 °C

Tail-less switching off

VCE(sat) = 1.85 V (typ.) @ IC = 80 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Very fast soft recovery antiparallel diode

STGWT80V60DF Applications

Photovoltaic inverters

Uninterruptible power supply

Welding

Power factor correction

Very high-frequency converters