STGF14NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
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STGF14NC60KD Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.299997g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
ULTRA FAST
Subcategory
Insulated Gate BIP Transistors
Voltage - Rated DC
600V
Max Power Dissipation
28W
Current Rating
11A
Base Part Number
STGF14
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
28W
Case Connection
ISOLATED
Input Type
Standard
Turn On Delay Time
22.5 ns
Transistor Application
POWER CONTROL
Rise Time
8.5ns
Polarity/Channel Type
N-CHANNEL
Turn-Off Delay Time
116 ns
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
11A
Reverse Recovery Time
37 ns
JEDEC-95 Code
TO-220AB
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
2V
Turn On Time
31.5 ns
Test Condition
390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.5V @ 15V, 7A
Continuous Collector Current
7A
Turn Off Time-Nom (toff)
340 ns
Gate Charge
34.4nC
Current - Collector Pulsed (Icm)
50A
Td (on/off) @ 25°C
22.5ns/116ns
Switching Energy
82μJ (on), 155μJ (off)
Gate-Emitter Voltage-Max
20V
Gate-Emitter Thr Voltage-Max
7V
Height
9.3mm
Length
10.4mm
Width
4.6mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.77000
$1.77
50
$1.52020
$76.01
100
$1.31030
$131.03
500
$1.09486
$547.43
1,000
$0.92475
$0.92475
2,500
$0.86805
$1.7361
5,000
$0.85860
$4.293
STGF14NC60KD Product Details
Description
The STGF14NC60KD is a 600 V short-circuit robust IGBT with a current rating of 14 amps. These devices are advanced PowerMESHTM technology-based IGBTs that are extremely fast. This method ensures a good balance between switching performance and low on-state behavior. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.
Features
Very soft ultrafast recovery antiparallel diode
Short-circuit withstand time 10 μs
Low on voltage drop (VCE(sat))
Low Cres / Cies ratio (no cross-conduction susceptibility)
High-power
Applications
High frequency inverters
SMPS and PFC in both hard switch and resonant topologies