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STGF14NC60KD

STGF14NC60KD

STGF14NC60KD

STMicroelectronics

STGF14NC60KD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGF14NC60KD Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 8 months ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.299997g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series PowerMESH™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature ULTRA FAST
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 28W
Current Rating 11A
Base Part Number STGF14
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 28W
Case Connection ISOLATED
Input Type Standard
Turn On Delay Time 22.5 ns
Transistor Application POWER CONTROL
Rise Time 8.5ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 116 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 11A
Reverse Recovery Time 37 ns
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2V
Turn On Time 31.5 ns
Test Condition 390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 7A
Continuous Collector Current 7A
Turn Off Time-Nom (toff) 340 ns
Gate Charge 34.4nC
Current - Collector Pulsed (Icm) 50A
Td (on/off) @ 25°C 22.5ns/116ns
Switching Energy 82μJ (on), 155μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 7V
Height 9.3mm
Length 10.4mm
Width 4.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.77000 $1.77
50 $1.52020 $76.01
100 $1.31030 $131.03
500 $1.09486 $547.43
1,000 $0.92475 $0.92475
2,500 $0.86805 $1.7361
5,000 $0.85860 $4.293
STGF14NC60KD Product Details

Description


The STGF14NC60KD is a 600 V short-circuit robust IGBT with a current rating of 14 amps. These devices are advanced PowerMESHTM technology-based IGBTs that are extremely fast. This method ensures a good balance between switching performance and low on-state behavior. An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device principally used as an electronic switch that has evolved to combine high efficiency and fast switching as it has been developed.



Features


  • Very soft ultrafast recovery antiparallel diode

  • Short-circuit withstand time 10 μs

  • Low on voltage drop (VCE(sat))

  • Low Cres / Cies ratio (no cross-conduction susceptibility)

  • High-power



Applications


  • High frequency inverters

  • SMPS and PFC in both hard switch and resonant topologies

  • Motor drives

  • Consumer electronics

  • Industrial technology


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