IXDN75N120

new-10%

Manufacturer part number:IXDN75N120

Manufacturer:IXYS

Description:IGBT MOD 1200V 150A 660W SOT227B

Case Package:SOT-23

Datasheet:IXDN75N120 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Weight	38.000013g
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Published	2000
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	660W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Configuration	Single
Case Connection	ISOLATED
Power - Max	660W
Transistor Application	MOTOR CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	150A
Current - Collector Cutoff (Max)	4mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	2.2V
Input Capacitance	5.5nF
Turn On Time	150 ns
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 75A
Turn Off Time-Nom (toff)	700 ns
IGBT Type	NPT
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	5.5nF @ 25V
VCEsat-Max	2.7 V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free