IXGR48N60B3D1

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Manufacturer part number:IXGR48N60B3D1

Manufacturer:IXYS

Description:IGBT 600V 60A 150W ISOPLUS247

Case Package:SOT-23

Datasheet:IXGR48N60B3D1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS247™
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GenX3™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	UL RECOGNIZED
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*48N60
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	150W
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	60A
Reverse Recovery Time	100 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	1.77V
Turn On Time	44 ns
Test Condition	480V, 30A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 40A
Turn Off Time-Nom (toff)	347 ns
IGBT Type	PT
Gate Charge	115nC
Current - Collector Pulsed (Icm)	280A
Td (on/off) @ 25°C	22ns/130ns
Switching Energy	840μJ (on), 660μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
Fall Time-Max (tf)	200ns
RoHS Status	ROHS3 Compliant