IXBH5N160G

new-10%

Manufacturer part number:IXBH5N160G

Manufacturer:IXYS

Description:IGBT 1600V 5.7A 68W TO247AD

Case Package:SOT-23

Datasheet:IXBH5N160G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.500007g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	BIMOSFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	68W
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Element Configuration	Single
Power Dissipation	68W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.6kV
Max Collector Current	5.7A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.6kV
Voltage - Collector Emitter Breakdown (Max)	1600V
Collector Emitter Saturation Voltage	4.9V
Turn On Time	340 ns
Test Condition	960V, 3A, 47 Ω, 10V
Vce(on) (Max) @ Vge, Ic	7.2V @ 15V, 3A
Turn Off Time-Nom (toff)	190 ns
Gate Charge	26nC
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.5V
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free