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IXFB44N100Q3

IXFB44N100Q3

IXFB44N100Q3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 220m Ω @ 22A, 10V ±30V 13600pF @ 25V 264nC @ 10V 1000V TO-264-3, TO-264AA

SOT-23

IXFB44N100Q3 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 264
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 220MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Pin Count 3
JESD-30 Code R-PSIP-T3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 1560W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.56kW
Case Connection DRAIN
Turn On Delay Time 48 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 220m Ω @ 22A, 10V
Vgs(th) (Max) @ Id 6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 44A Tc
Gate Charge (Qg) (Max) @ Vgs 264nC @ 10V
Rise Time 300ns
Drain to Source Voltage (Vdss) 1000V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 66 ns
Continuous Drain Current (ID) 44A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 1kV
Pulsed Drain Current-Max (IDM) 110A
Avalanche Energy Rating (Eas) 4000 mJ
Height 26.59mm
Length 20.29mm
Width 5.31mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $31.06000 $31.06
25 $26.40120 $660.03
100 $24.53740 $2453.74
IXFB44N100Q3 Product Details

IXFB44N100Q3 Overview


There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 4000 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 13600pF @ 25V.This device has a continuous drain current (ID) of [44A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=1kV, the drain-source breakdown voltage is 1kV.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 66 ns.A maximum pulsed drain current of 110A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 48 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.In order to operate this transistor, a voltage of 1000V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).

IXFB44N100Q3 Features


the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 44A
a drain-to-source breakdown voltage of 1kV voltage
the turn-off delay time is 66 ns
based on its rated peak drain current 110A.
a 1000V drain to source voltage (Vdss)


IXFB44N100Q3 Applications


There are a lot of IXYS
IXFB44N100Q3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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