NDD03N80Z-1G

new-10%

Manufacturer part number:NDD03N80Z-1G

Manufacturer:ON Semiconductor

Description:Trans MOSFET N-CH 800V 2.9A 3-Pin(3+Tab) IPAK Rail

Case Package:SOT-23

Datasheet:NDD03N80Z-1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Through Hole
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount	NO
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	3 (168 Hours)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Pin Count	4
JESD-30 Code	R-PSIP-T3
Number of Elements	1
Power Dissipation-Max	96W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.5 Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds	440pF @ 25V
Current - Continuous Drain (Id) @ 25°C	2.9A Tc
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Rise Time	7ns
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	17 ns
Continuous Drain Current (ID)	2.9A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	1.9A
Pulsed Drain Current-Max (IDM)	12A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	100 mJ
Height	7.62mm
Length	6.73mm
Width	2.38mm
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free