CSD23201W10

new-10%

Manufacturer part number:CSD23201W10

Manufacturer:Texas Instruments

Description:CSD23201W10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

Case Package:SOT-23

Datasheet:CSD23201W10 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Copper, Silver, Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	4-UFBGA, DSBGA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e1
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	SMD/SMT
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	BALL
Peak Reflow Temperature (Cel)	260
Base Part Number	CSD23201
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1W
Turn On Delay Time	24 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	82m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	325pF @ 6V
Current - Continuous Drain (Id) @ 25°C	2.2A Tc
Gate Charge (Qg) (Max) @ Vgs	2.4nC @ 4.5V
Rise Time	19ns
Drive Voltage (Max Rds On,Min Rds On)	1.5V 4.5V
Fall Time (Typ)	29 ns
Turn-Off Delay Time	68 ns
Continuous Drain Current (ID)	2.2A
Threshold Voltage	600mV
Gate to Source Voltage (Vgs)	-6V
Drain to Source Breakdown Voltage	12V
Dual Supply Voltage	12V
Nominal Vgs	600 mV
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead