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CSD23201W10

CSD23201W10

CSD23201W10

Texas Instruments

CSD23201W10 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Texas Instruments stock available on our website

SOT-23

CSD23201W10 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Contact Plating Copper, Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series NexFET™
JESD-609 Code e1
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form BALL
Peak Reflow Temperature (Cel) 260
Base Part Number CSD23201
Pin Count 4
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 24 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 82m Ω @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 325pF @ 6V
Current - Continuous Drain (Id) @ 25°C 2.2A Tc
Gate Charge (Qg) (Max) @ Vgs 2.4nC @ 4.5V
Rise Time 19ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Fall Time (Typ) 29 ns
Turn-Off Delay Time 68 ns
Continuous Drain Current (ID) 2.2A
Threshold Voltage 600mV
Gate to Source Voltage (Vgs) -6V
Drain to Source Breakdown Voltage 12V
Dual Supply Voltage 12V
Nominal Vgs 600 mV
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.513125 $0.513125
10 $0.484080 $4.8408
100 $0.456679 $45.6679
500 $0.430829 $215.4145
1000 $0.406443 $406.443
CSD23201W10 Product Details

CSD23201W10 Description


The device's design aims to produce the lowest gate charge and on-resistance while maintaining outstanding thermal properties in an extremely low profile. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance.  In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.



CSD23201W10 Features


? Lowest Possible Qg and Qgd


?1 mm x 1 mm Small Footprint


?Small Profile Height: 0.62 mm


?Bp Free


?3kV Gate ESD Protection


?RoHS conformant


?Free of Halogen



CSD23201W10 Applications


Switching applications


Related Part Number

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