CSD23201W10 Description
The device's design aims to produce the lowest gate charge and on-resistance while maintaining outstanding thermal properties in an extremely low profile. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
CSD23201W10 Features
? Lowest Possible Qg and Qgd
?1 mm x 1 mm Small Footprint
?Small Profile Height: 0.62 mm
?Bp Free
?3kV Gate ESD Protection
?RoHS conformant
?Free of Halogen
CSD23201W10 Applications
Switching applications
