SI2374DS-T1-GE3

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Manufacturer part number:SI2374DS-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CHAN 20V SOT23

Case Package:SOT-23

Datasheet:SI2374DS-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	MATTE TIN
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	960mW Ta 1.7W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	960mW
Turn On Delay Time	10 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	30m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	735pF @ 10V
Current - Continuous Drain (Id) @ 25°C	4.5A Ta 5.9A Tc
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	22ns
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	4.5A
Threshold Voltage	1V
Gate to Source Voltage (Vgs)	8V
Drain Current-Max (Abs) (ID)	5.9A
Drain to Source Breakdown Voltage	20V
Max Junction Temperature (Tj)	150°C
Height	1.12mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free