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IXFH220N20X3

  • IXFH220N20X3
  • IXFH220N20X3

IXFH220N20X3

IXFH220N20X3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 6.2m Ω @ 110A, 10V ±20V 13600pF @ 25V 204nC @ 10V 200V TO-247-3

SOT-23

IXFH220N20X3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 960W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.2m Ω @ 110A, 10V
Vgs(th) (Max) @ Id 4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 13600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 220A Tc
Gate Charge (Qg) (Max) @ Vgs 204nC @ 10V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.209075 $16.209075
10 $15.291580 $152.9158
100 $14.426019 $1442.6019
500 $13.609452 $6804.726
1000 $12.839106 $12839.106
IXFH220N20X3 Product Details

IXFH220N20X3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 13600pF @ 25V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFH220N20X3 Features


a 200V drain to source voltage (Vdss)


IXFH220N20X3 Applications


There are a lot of IXYS
IXFH220N20X3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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