PSMN057-200P,127

new-10%

Manufacturer part number:PSMN057-200P,127

Manufacturer:Nexperia USA Inc.

Description:Single N-Channel 200 V 165 mOhm 96 nC 250 W Silicon Flange Mount Mosfet TO-220-3

Case Package:SOT-23

Datasheet:PSMN057-200P,127 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Through Hole
Package / Case	TO-220-3
Surface Mount	NO
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2011
Series	TrenchMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.75
Technology	MOSFET (Metal Oxide)
Pin Count	3
Number of Elements	1
Power Dissipation-Max	250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	250W
Case Connection	DRAIN
Turn On Delay Time	18 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	57m Ω @ 17A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3750pF @ 25V
Current - Continuous Drain (Id) @ 25°C	39A Tc
Gate Charge (Qg) (Max) @ Vgs	96nC @ 10V
Rise Time	58ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	78 ns
Turn-Off Delay Time	105 ns
Continuous Drain Current (ID)	39A
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	200V
Drain-source On Resistance-Max	0.057Ohm
Drain to Source Breakdown Voltage	200V
Pulsed Drain Current-Max (IDM)	156A
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free