IPP65R310CFDAAKSA1

new-10%

Manufacturer part number:IPP65R310CFDAAKSA1

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 650V TO-220-3

Case Package:SOT-23

Datasheet:IPP65R310CFDAAKSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Published	2008
Series	Automotive, AEC-Q101, CoolMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin (Sn)
Additional Feature	HIGH RELIABILITY
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	104.2W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	11 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	310m Ω @ 4.4A, 10V
Vgs(th) (Max) @ Id	4.5V @ 440μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	1110pF @ 100V
Current - Continuous Drain (Id) @ 25°C	11.4A Tc
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Rise Time	7.5ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	7 ns
Turn-Off Delay Time	45 ns
Continuous Drain Current (ID)	11.4A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	650V
Avalanche Energy Rating (Eas)	290 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead