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TK19A45D(STA4,Q,M)

TK19A45D(STA4,Q,M)

TK19A45D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 19A TO-220SIS

SOT-23

TK19A45D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 19A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 50ns
Drain to Source Voltage (Vdss) 450V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 30V
Input Capacitance 2.6nF
Rds On Max 250 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $14.854532 $14.854532
10 $14.013709 $140.13709
100 $13.220481 $1322.0481
500 $12.472151 $6236.0755
1000 $11.766180 $11766.18

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