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IXFH42N60P3

IXFH42N60P3

IXFH42N60P3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 185m Ω @ 500mA, 10V ±30V 5150pF @ 25V 78nC @ 10V TO-247-3

SOT-23

IXFH42N60P3 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™, Polar3™
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 830W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection DRAIN
Turn On Delay Time 32 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 185m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 5150pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 78nC @ 10V
Rise Time 23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 17 ns
Turn-Off Delay Time 60 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4.5V
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.185Ohm
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 100A
Height 21.46mm
Length 16.26mm
Width 5.3mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.94000 $6.94
30 $5.58000 $167.4
120 $5.08400 $610.08
510 $4.11680 $2099.568
1,020 $3.47200 $3.472
IXFH42N60P3 Product Details

IXFH42N60P3 Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5150pF @ 25V.This device has a continuous drain current (ID) of [42A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.A maximum pulsed drain current of 100A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 32 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.Electrical devices have threshold voltages at which their operations become active, and this transistor has a threshold voltage of 4.5V.Its overall power consumption can be reduced by using drive voltage (10V).

IXFH42N60P3 Features


a continuous drain current (ID) of 42A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 60 ns
based on its rated peak drain current 100A.
a threshold voltage of 4.5V


IXFH42N60P3 Applications


There are a lot of IXYS
IXFH42N60P3 applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit

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