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IXFH50N50P3

IXFH50N50P3

IXFH50N50P3

IXYS

MOSFET N-Channel: Power MOSFET w/Fast Diode

SOT-23

IXFH50N50P3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series HiPerFET™, Polar3™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 960W Tc
Element Configuration Single
Turn On Delay Time 25 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 120m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4335pF @ 25V
Current - Continuous Drain (Id) @ 25°C 50A Tc
Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 50A
Gate to Source Voltage (Vgs) 30V
Height 21.46mm
Length 16.26mm
Width 5.3mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.25000 $8.25
30 $6.76500 $202.95
120 $6.10500 $732.6
510 $5.11500 $2608.65
1,020 $4.62000 $4.62

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