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IXFH69N30P

IXFH69N30P

IXFH69N30P

IXYS

MOSFET N-CH 300V 69A TO-247

SOT-23

IXFH69N30P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2006
Series PolarHT™ HiPerFET™
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 500W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation500W
Case Connection DRAIN
Turn On Delay Time25 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 49m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 4960pF @ 25V
Current - Continuous Drain (Id) @ 25°C 69A Tc
Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
Rise Time25ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 27 ns
Turn-Off Delay Time 75 ns
Continuous Drain Current (ID) 69A
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.049Ohm
Drain to Source Breakdown Voltage 300V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 1500 mJ
Height 21.46mm
Length 16.26mm
Width 5.3mm
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:596 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$52.226604$52.226604
10$49.270381$492.70381
100$46.481492$4648.1492
500$43.850464$21925.232
1000$41.368362$41368.362

About IXFH69N30P

The IXFH69N30P from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 300V 69A TO-247.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFH69N30P, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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