IXFH90N20X3

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Manufacturer part number:IXFH90N20X3

Manufacturer:IXYS

Description:N-Channel Tube 12.8m Ω @ 45A, 10V ±20V 5420pF @ 25V 78nC @ 10V 200V TO-247-3

Case Package:SOT-23

Datasheet:IXFH90N20X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power Dissipation-Max	390W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	12.8m Ω @ 45A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds	5420pF @ 25V
Current - Continuous Drain (Id) @ 25°C	90A Tc
Gate Charge (Qg) (Max) @ Vgs	78nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$50.034400	$50.0344
10	$47.202264	$472.02264
100	$44.530438	$4453.0438
500	$42.009847	$21004.9235
1000	$39.631931	$39631.931

IXFH90N20X3 Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 5420pF @ 25V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.