IRLR120TRRPBF

new-10%

Manufacturer part number:IRLR120TRRPBF

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 7.7A DPAK

Case Package:SOT-23

Datasheet:IRLR120TRRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Weight	1.437803g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	40
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.5W Ta 42W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9.8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 4.6A, 5V
Vgs(th) (Max) @ Id	2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	490pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7.7A Tc
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Rise Time	64ns
Drive Voltage (Max Rds On,Min Rds On)	4V 5V
Vgs (Max)	±10V
Fall Time (Typ)	27 ns
Turn-Off Delay Time	21 ns
Continuous Drain Current (ID)	7.7A
Gate to Source Voltage (Vgs)	10V
Drain-source On Resistance-Max	0.27Ohm
Drain to Source Breakdown Voltage	100V
Height	2.39mm
Length	6.73mm
Width	6.22mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant