IXFN180N25T

new-10%

Manufacturer part number:IXFN180N25T

Manufacturer:IXYS

Description:MOSFET N-CH 250V 168A SOT-227

Case Package:SOT-23

Datasheet:IXFN180N25T Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Series	GigaMOS™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	NICKEL
Additional Feature	UL RECOGNIZED, AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	900W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.9m Ω @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	28000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	168A Tc
Gate Charge (Qg) (Max) @ Vgs	345nC @ 10V
Drain to Source Voltage (Vdss)	250V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	168A
Drain Current-Max (Abs) (ID)	164A
Drain-source On Resistance-Max	0.0129Ohm
Pulsed Drain Current-Max (IDM)	500A
DS Breakdown Voltage-Min	250V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free