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IXFK180N15P

IXFK180N15P

IXFK180N15P

IXYS

MOSFET N-CH 150V 180A TO-264

SOT-23

IXFK180N15P Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 20 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Bulk
Published 2006
Series HiPerFET™, PolarP2™
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 11MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Pin Count 3
Number of Elements 1
Power Dissipation-Max 830W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 830W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11m Ω @ 90A, 10V
Vgs(th) (Max) @ Id 5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 180A Tc
Gate Charge (Qg) (Max) @ Vgs 240nC @ 10V
Rise Time 32ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 36 ns
Turn-Off Delay Time 150 ns
Continuous Drain Current (ID) 180A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Avalanche Energy Rating (Eas) 4000 mJ
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $16.865609 $16.865609
10 $15.910952 $159.10952
100 $15.010332 $1501.0332
500 $14.160691 $7080.3455
1000 $13.359142 $13359.142

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