RSJ400N10TL

new-10%

Manufacturer part number:RSJ400N10TL

Manufacturer:ROHM Semiconductor

Description:MOSFET N-CH 100V 40A LPTS

Case Package:SOT-23

Datasheet:RSJ400N10TL Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	83
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2012
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Subcategory	FET General Purpose Powers
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.35W Ta 50W Tc
Operating Mode	ENHANCEMENT MODE
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	27m Ω @ 40A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	3600pF @ 25V
Current - Continuous Drain (Id) @ 25°C	40A Tc
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Rise Time	80ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	250 ns
Turn-Off Delay Time	205 ns
Continuous Drain Current (ID)	40A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.03Ohm
Pulsed Drain Current-Max (IDM)	80A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	14.6 mJ
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free