SI1413DH-T1-E3

new-10%

Manufacturer part number:SI1413DH-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 20V 2.3A SC-70-6

Case Package:SOT-23

Datasheet:SI1413DH-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Number of Pins	6
Supplier Device Package	SC-70-6 (SOT-363)
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	1W Ta
Element Configuration	Single
Power Dissipation	1W
Turn On Delay Time	13 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	115mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id	800mV @ 100μA
Current - Continuous Drain (Id) @ 25°C	2.3A Ta
Gate Charge (Qg) (Max) @ Vgs	8.5nC @ 4.5V
Rise Time	32ns
Drain to Source Voltage (Vdss)	20V
Drive Voltage (Max Rds On,Min Rds On)	1.8V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	32 ns
Turn-Off Delay Time	34 ns
Continuous Drain Current (ID)	2.3A
Gate to Source Voltage (Vgs)	8V
Drain to Source Breakdown Voltage	20V
Drain to Source Resistance	220mOhm
Rds On Max	115 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant