FDMC86570L

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FDMC86570L

Manufacturer part number:FDMC86570L

Manufacturer:ON Semiconductor

Description:FDMC86570L datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMC86570L Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Lifecycle Status	ACTIVE (Last Updated: 1 week ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerWDFN
Number of Pins	8
Weight	152.7mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
JESD-30 Code	S-PDSO-N5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	2.3W Ta 54W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.3W
Case Connection	DRAIN
Turn On Delay Time	19 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.3m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6705pF @ 30V
Current - Continuous Drain (Id) @ 25°C	18A Ta 56A Tc
Gate Charge (Qg) (Max) @ Vgs	88nC @ 10V
Rise Time	12ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	38 ns
Continuous Drain Current (ID)	18A
Threshold Voltage	1.8V
JEDEC-95 Code	MO-240BA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	56A
Drain-source On Resistance-Max	0.0043Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	200A
Avalanche Energy Rating (Eas)	253 mJ
Max Junction Temperature (Tj)	150°C
Height	800μm
Length	3.4mm
Width	3.4mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant