IXFL39N90

new-10%

Manufacturer part number:IXFL39N90

Manufacturer:IXYS

Description:IXYS IXFL39N90 N-channel MOSFET Transistor, 34 A, 900 V, 3-Pin ISOPLUS264

Case Package:SOT-23

Datasheet:IXFL39N90 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	ISOPLUS264™
Number of Pins	264
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	580W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	580W
Case Connection	ISOLATED
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	220m Ω @ 19.5A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	13400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	34A Tc
Gate Charge (Qg) (Max) @ Vgs	375nC @ 10V
Rise Time	68ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	30 ns
Turn-Off Delay Time	125 ns
Continuous Drain Current (ID)	34A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.22Ohm
Drain to Source Breakdown Voltage	900V
Pulsed Drain Current-Max (IDM)	154A
Avalanche Energy Rating (Eas)	4000 mJ
Height	26.42mm
Length	20.29mm
Width	5.21mm
RoHS Status	ROHS3 Compliant