FDMS86201

new-10%

FDMS86201

Manufacturer part number:FDMS86201

Manufacturer:ON Semiconductor

Description:FDMS86201 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDMS86201 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Lifecycle Status	ACTIVE (Last Updated: 10 hours ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Weight	68.1mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2017
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	14.5MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	R-PDSO-F5
Number of Elements	1
Power Dissipation-Max	2.5W Ta 104W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	104W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	11.5m Ω @ 11.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	2735pF @ 60V
Current - Continuous Drain (Id) @ 25°C	11.6A Ta 35A Tc
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	7.7ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	7.1 ns
Turn-Off Delay Time	27 ns
Continuous Drain Current (ID)	35A
Threshold Voltage	2.6V
JEDEC-95 Code	MO-240AA
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	65A
Drain to Source Breakdown Voltage	120V
Avalanche Energy Rating (Eas)	264 mJ
Nominal Vgs	2.6 V
Height	1.05mm
Length	5mm
Width	6mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free