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APT33N90JCU3

APT33N90JCU3

APT33N90JCU3

Microsemi Corporation

Trans MOSFET N-CH 900V 33A 4-Pin SOT-227

SOT-23

APT33N90JCU3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 22 Weeks
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SOT-227-4, miniBLOC
Number of Pins 4
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tray
Published 2012
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Additional Feature AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 290W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 290W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 120m Ω @ 26A, 10V
Vgs(th) (Max) @ Id 3.5V @ 3mA
Input Capacitance (Ciss) (Max) @ Vds 6800pF @ 100V
Current - Continuous Drain (Id) @ 25°C 33A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Drain to Source Voltage (Vdss) 900V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 75A
DS Breakdown Voltage-Min 900V
FET Feature Super Junction
RoHS Status RoHS Compliant

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