IRFU3710ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRFU3710ZPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2004
Series
HEXFET®
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
18MOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
100V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
260
Current Rating
42A
[email protected] Reflow Temperature-Max (s)
30
Lead Pitch
2.28mm
Lead Length
9.65mm
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
Case Connection
DRAIN
Turn On Delay Time
14 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
18m Ω @ 33A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2930pF @ 25V
Current - Continuous Drain (Id) @ 25°C
42A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Rise Time
43ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
42 ns
Turn-Off Delay Time
53 ns
Continuous Drain Current (ID)
42A
Threshold Voltage
4V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
56A
Drain to Source Breakdown Voltage
100V
Pulsed Drain Current-Max (IDM)
220A
Dual Supply Voltage
100V
Avalanche Energy Rating (Eas)
150 mJ
Recovery Time
53 ns
Nominal Vgs
4 V
Height
6.1mm
Length
6.6mm
Width
2.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.525521
$0.525521
10
$0.495775
$4.95775
100
$0.467712
$46.7712
500
$0.441238
$220.619
1000
$0.416262
$416.262
IRFU3710ZPBF Product Details
IRFU3710ZPBF Description
IRFU3710ZPBF is a 100v HEXFET? Power MOSFET. This HEXFET? Power MOSFET IRFU3710ZPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.