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IRFU3710ZPBF

IRFU3710ZPBF

IRFU3710ZPBF

Infineon Technologies

IRFU3710ZPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRFU3710ZPBF Datasheet

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Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tube
Published 2004
Series HEXFET®
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Resistance 18MOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 100V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Current Rating 42A
[email protected] Reflow Temperature-Max (s) 30
Lead Pitch 2.28mm
Lead Length 9.65mm
Number of Elements 1
Power Dissipation-Max 140W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 140W
Case Connection DRAIN
Turn On Delay Time 14 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 18m Ω @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2930pF @ 25V
Current - Continuous Drain (Id) @ 25°C 42A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Rise Time 43ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 42 ns
Turn-Off Delay Time 53 ns
Continuous Drain Current (ID) 42A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 56A
Drain to Source Breakdown Voltage 100V
Pulsed Drain Current-Max (IDM) 220A
Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 150 mJ
Recovery Time 53 ns
Nominal Vgs 4 V
Height 6.1mm
Length 6.6mm
Width 2.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.525521 $0.525521
10 $0.495775 $4.95775
100 $0.467712 $46.7712
500 $0.441238 $220.619
1000 $0.416262 $416.262
IRFU3710ZPBF Product Details

IRFU3710ZPBF Description


IRFU3710ZPBF is a 100v HEXFET? Power MOSFET. This HEXFET? Power MOSFET IRFU3710ZPBF utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 



IRFU3710ZPBF Features


  • Advanced Process Technology

  • Ultra Low On-Resistance

  • 175°C Operating Temperature

  • Fast Switching

  • Repetitive Avalanche Allowed up to Tjmax

  • Multiple Package Options

  • Lead-Free 



IRFU3710ZPBF Applications


  • DC motor drive

  • High-efficiency synchronous rectification in SMPS

  • Uninterruptible power supply

  • High-speed power switching

  • Hard switched and high-frequency circuits


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