IXFN340N06

new-10%

Manufacturer part number:IXFN340N06

Manufacturer:IXYS

Description:MOSFET N-CH 60V 340A SOT-227B

Case Package:SOT-23

Datasheet:IXFN340N06 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	16800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	340A Tc
Gate Charge (Qg) (Max) @ Vgs	600nC @ 10V
Rise Time	95ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	33 ns
Turn-Off Delay Time	200 ns
Continuous Drain Current (ID)	340A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.003Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	1360A
RoHS Status	RoHS Compliant