PSMN5R2-60YLX

new-10%

Manufacturer part number:PSMN5R2-60YLX

Manufacturer:Nexperia USA Inc.

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 5.2m Ω @ 25A, 10V ±20V 6319pF @ 25V 39.4nC @ 5V 60V SC-100, SOT-669

Case Package:SOT-23

Datasheet:PSMN5R2-60YLX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SC-100, SOT-669
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2011
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Reference Standard	IEC-60134
JESD-30 Code	R-PSSO-G4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	195W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	5.2m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6319pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	39.4nC @ 5V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	100A
JEDEC-95 Code	MO-235
Drain-source On Resistance-Max	0.006Ohm
Pulsed Drain Current-Max (IDM)	479A
DS Breakdown Voltage-Min	60V
Avalanche Energy Rating (Eas)	127 mJ
RoHS Status	ROHS3 Compliant