IXFN38N100Q2

new-10%

Manufacturer part number:IXFN38N100Q2

Manufacturer:IXYS

Description:MOSFET N-CH 1000V 38A SOT-227

Case Package:SOT-23

Datasheet:IXFN38N100Q2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	890W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	890W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	250m Ω @ 19A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	7200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	28ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	15 ns
Turn-Off Delay Time	57 ns
Continuous Drain Current (ID)	38A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.25Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	152A
Avalanche Energy Rating (Eas)	5000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free