IXFN44N80

new-10%

IXFN44N80

Manufacturer part number:IXFN44N80

Manufacturer:IXYS

Description:MOSFET N-CH 800V 44A SOT-227B

Case Package:SOT-23

Datasheet:IXFN44N80 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	3
Weight	36mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2003
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Termination	Screw
ECCN Code	EAR99
Resistance	165mOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	4
JESD-30 Code	R-PUFM-X4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	700W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	700W
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	165m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	10000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	44A Tc
Gate Charge (Qg) (Max) @ Vgs	380nC @ 10V
Rise Time	48ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	100 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	44A
Threshold Voltage	4.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	176A
Dual Supply Voltage	800V
Avalanche Energy Rating (Eas)	4000 mJ
Nominal Vgs	4.5 V
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free