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NTR4003NT3G

NTR4003NT3G

NTR4003NT3G

ON Semiconductor

NTR4003NT3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTR4003NT3G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 10 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 1Ohm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Power Dissipation-Max 690mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 690mW
Turn On Delay Time 16.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id 1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 21pF @ 5V
Current - Continuous Drain (Id) @ 25°C 500mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.15nC @ 5V
Rise Time 47.9ns
Drive Voltage (Max Rds On,Min Rds On) 2.5V 4V
Vgs (Max) ±20V
Fall Time (Typ) 47.9 ns
Turn-Off Delay Time 65.1 ns
Continuous Drain Current (ID) 500mA
Threshold Voltage 800mV
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.5A
Drain to Source Breakdown Voltage 30V
Height 1.01mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.40000 $0.4
500 $0.396 $198
1000 $0.392 $392
1500 $0.388 $582
2000 $0.384 $768
2500 $0.38 $950
NTR4003NT3G Product Details

NTR4003NT3G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21pF @ 5V.This device has a continuous drain current (ID) of [500mA], which is its maximum continuous current.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.There is no drain current on this device since the maximum continuous current it can conduct is 0.5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65.1 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 800mV.Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.

NTR4003NT3G Features


a continuous drain current (ID) of 500mA
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 65.1 ns
a threshold voltage of 800mV

NTR4003NT3G Applications


There are a lot of ON Semiconductor NTR4003NT3G applications of single MOSFETs transistors.

  • Telecom 1 Sever Power Supplies
  • Server power supplies
  • Uninterruptible Power Supply
  • Solar Inverter
  • Motor drives and Uninterruptible Power Supplies
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Power Management Functions
  • Battery Protection Circuit
  • Lighting, Server, Telecom and UPS.
  • PFC stages, hard switching PWM stages and resonant switching

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