NTR4003NT3G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTR4003NT3G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
10 Weeks
Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
1Ohm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
690mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
690mW
Turn On Delay Time
16.7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
1.5 Ω @ 10mA, 4V
Vgs(th) (Max) @ Id
1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
21pF @ 5V
Current - Continuous Drain (Id) @ 25°C
500mA Ta
Gate Charge (Qg) (Max) @ Vgs
1.15nC @ 5V
Rise Time
47.9ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4V
Vgs (Max)
±20V
Fall Time (Typ)
47.9 ns
Turn-Off Delay Time
65.1 ns
Continuous Drain Current (ID)
500mA
Threshold Voltage
800mV
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.5A
Drain to Source Breakdown Voltage
30V
Height
1.01mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.40000
$0.4
500
$0.396
$198
1000
$0.392
$392
1500
$0.388
$582
2000
$0.384
$768
2500
$0.38
$950
NTR4003NT3G Product Details
NTR4003NT3G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 21pF @ 5V.This device has a continuous drain current (ID) of [500mA], which is its maximum continuous current.With a drain-source breakdown voltage of 30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 30V.There is no drain current on this device since the maximum continuous current it can conduct is 0.5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 65.1 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 16.7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 800mV.Using drive voltage (2.5V 4V), this device contributes to a reduction in overall power consumption.
NTR4003NT3G Features
a continuous drain current (ID) of 500mA a drain-to-source breakdown voltage of 30V voltage the turn-off delay time is 65.1 ns a threshold voltage of 800mV
NTR4003NT3G Applications
There are a lot of ON Semiconductor NTR4003NT3G applications of single MOSFETs transistors.
Telecom 1 Sever Power Supplies
Server power supplies
Uninterruptible Power Supply
Solar Inverter
Motor drives and Uninterruptible Power Supplies
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Power Management Functions
Battery Protection Circuit
Lighting, Server, Telecom and UPS.
PFC stages, hard switching PWM stages and resonant switching