IXFN60N80P

new-10%

Manufacturer part number:IXFN60N80P

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) N-Channel Tube 140m Ω @ 30A, 10V ±30V 18000pF @ 25V 250nC @ 10V SOT-227-4, miniBLOC

Case Package:SOT-23

Datasheet:IXFN60N80P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Chassis Mount, Panel, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PolarHV™
Published	2003
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	4
Number of Elements	1
Power Dissipation-Max	1040W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.04kW
Case Connection	ISOLATED
Turn On Delay Time	36 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	140m Ω @ 30A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	18000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	53A Tc
Gate Charge (Qg) (Max) @ Vgs	250nC @ 10V
Rise Time	29ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	26 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	53A
Threshold Voltage	5V
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	800V
Pulsed Drain Current-Max (IDM)	250A
Avalanche Energy Rating (Eas)	5000 mJ
Height	9.6mm
Length	38.23mm
Width	25.42mm
REACH SVHC	No SVHC
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free