APT34F100B2

new-10%

Manufacturer part number:APT34F100B2

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 1000V 35A T-MAX

Case Package:SOT-23

Datasheet:APT34F100B2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 8™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Pure Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	34A
Pin Count	3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1135W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	39 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	380m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	9835pF @ 25V
Current - Continuous Drain (Id) @ 25°C	35A Tc
Gate Charge (Qg) (Max) @ Vgs	305nC @ 10V
Rise Time	40ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	38 ns
Turn-Off Delay Time	150 ns
Continuous Drain Current (ID)	35A
JEDEC-95 Code	TO-247AB
Gate to Source Voltage (Vgs)	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free