IXFN300N20X3

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Manufacturer part number:IXFN300N20X3

Manufacturer:IXYS

Description:MOSFET (Metal Oxide) N-Channel Tube 3.5m Ω @ 150A, 10V ±20V 23800pF @ 25V 375nC @ 10V 200V SOT-227-4, miniBLOC

Case Package:SOT-23

Datasheet:IXFN300N20X3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	19 Weeks
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	695W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.5m Ω @ 150A, 10V
Vgs(th) (Max) @ Id	4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	23800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	300A Tc
Gate Charge (Qg) (Max) @ Vgs	375nC @ 10V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
1	$34.46000	$34.46
10	$31.87600	$318.76
100	$27.22340	$2722.34

IXFN300N20X3 Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 23800pF @ 25V.This transistor requires a drain-source voltage (Vdss) of 200V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).