IRLL024NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
SOT-23
IRLL024NTRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
IRLL024NTRPBF
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
1999
Series
HEXFET®
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
65mOhm
Additional Feature
AVALANCHE RATED, ULTRA LOW RESISTANCE
Voltage - Rated DC
55V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
3.1A
JESD-30 Code
R-PDSO-G4
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.1W
Case Connection
DRAIN
Turn On Delay Time
7.4 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 3.1A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
510pF @ 25V
Current - Continuous Drain (Id) @ 25°C
3.1A Ta
Gate Charge (Qg) (Max) @ Vgs
15.6nC @ 5V
Rise Time
21ns
Drive Voltage (Max Rds On,Min Rds On)
4V 10V
Vgs (Max)
±16V
Fall Time (Typ)
25 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
3.1A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
55V
Dual Supply Voltage
55V
Recovery Time
58 ns
Max Junction Temperature (Tj)
150°C
Nominal Vgs
2 V
Height
1.8mm
Length
6.6802mm
Width
3.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Contains Lead, Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,500
$0.38824
$0.77648
5,000
$0.36431
$1.82155
12,500
$0.35235
$4.2282
25,000
$0.34583
$8.64575
IRLL024NTRPBF Product Details
Description
A HEXFET? Power MOSFET is the IRLL024NTRPBF. Advanced processing techniques are used in Fifth Generation HEXFETs to obtain extraordinarily low on-resistance per silicon area. This benefit, when paired with the quick switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, gives the designer an exceptionally efficient and dependable device that can be used in a wide range of applications.
The SOT-223 is a surface-mount package that may be soldered using vapor phase, infrared, or wave soldering processes. Its one-of-a-kind package design enables for effortless automatic pick-and-place, just like other SOT or SOIC packages, but with the extra benefit of increased thermal performance thanks to an expanded heat sinking tab. In a typical surface mount application, the power dissipation of 1.0W is attainable.