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IXFR80N50P

IXFR80N50P

IXFR80N50P

IXYS

MOSFET (Metal Oxide) N-Channel Tube 72m Ω @ 40A, 10V ±30V 12700pF @ 25V 197nC @ 10V ISOPLUS247™

SOT-23

IXFR80N50P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case ISOPLUS247™
Number of Pins 247
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™, PolarHT™
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 72MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED, UL RECOGNIZED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating80A
Pin Count3
JESD-30 Code R-PSIP-T3
Number of Elements 1
Power Dissipation-Max 360W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation360W
Case Connection ISOLATED
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 72m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 45A Tc
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Rise Time27ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 70 ns
Continuous Drain Current (ID) 45A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 200A
Avalanche Energy Rating (Eas) 3500 mJ
Isolation Voltage2.5kV
REACH SVHC No SVHC
Radiation HardeningNo
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:310 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$18.02000$18.02
30$15.15167$454.5501
120$13.92300$1670.76
510$11.87551$6056.5101

IXFR80N50P Product Details

IXFR80N50P Description


IXFR80N50P is a single bipolar transistor from the manufacturer Diodes Incorporated with the voltage of 500V. The operating temperature of IXFR80N50P is -55°C~150°C TJ and its maximum power dissipation is 2.1W. IXFR80N50P has 4 pins and it is available in Tape & Reel (TR) packaging method.



IXFR80N50P Features


Low drain to tab capacitance(<30pF)

Low RDS (on) HDMOSTM process

Rugged polysilicon gate cell structure

Rated for Unclamped Inductive Load Switching (UIS)

Fast intrinsic Rectifier



IXFR80N50P Applications


DC-DC converters

Battery chargers

Switched-mode and resonant-mode power supplies

DC choppers

AC motor control


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