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TPC6109-H(TE85L,FM

TPC6109-H(TE85L,FM

TPC6109-H(TE85L,FM

Toshiba Semiconductor and Storage

MOSFET P-CH 30V 5A VS-6

SOT-23

TPC6109-H(TE85L,FM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Supplier Device Package VS-6 (2.9x2.8)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIII-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 59mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 10V
Current - Continuous Drain (Id) @ 25°C 5A Ta
Gate Charge (Qg) (Max) @ Vgs 12.3nC @ 10V
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V

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