IXFT50N30Q3

new-10%

Manufacturer part number:IXFT50N30Q3

Manufacturer:IXYS

Description:MOSFET Q3Class HiPerFET Pwr MOSFET 300V/50A

Case Package:SOT-23

Datasheet:IXFT50N30Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2011
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Resistance	80MOhm
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	690W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	690W
Case Connection	DRAIN
Turn On Delay Time	14 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	80m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	6.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds	3165pF @ 25V
Current - Continuous Drain (Id) @ 25°C	50A Tc
Gate Charge (Qg) (Max) @ Vgs	65nC @ 10V
Rise Time	250ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	300V
Avalanche Energy Rating (Eas)	1500 mJ
Height	5.1mm
Length	16.05mm
Width	14mm
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free