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IXFX210N30X3

  • IXFX210N30X3
  • IXFX210N30X3

IXFX210N30X3

IXFX210N30X3

IXYS

MOSFET (Metal Oxide) N-Channel Tube 5.5m Ω @ 105A, 10V ±20V 24.2nF @ 25V 375nC @ 10V 300V TO-247-3

SOT-23

IXFX210N30X3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 19 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series HiPerFET™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1250W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.5m Ω @ 105A, 10V
Vgs(th) (Max) @ Id 4.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 24.2nF @ 25V
Current - Continuous Drain (Id) @ 25°C 210A Tc
Gate Charge (Qg) (Max) @ Vgs 375nC @ 10V
Drain to Source Voltage (Vdss) 300V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $22.76000 $22.76
30 $19.34600 $580.38
120 $17.98042 $2157.6504
510 $15.93200 $8125.32
IXFX210N30X3 Product Details

IXFX210N30X3 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 24.2nF @ 25V.Operating this transistor requires a 300V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFX210N30X3 Features


a 300V drain to source voltage (Vdss)


IXFX210N30X3 Applications


There are a lot of IXYS
IXFX210N30X3 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools

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