IXFX32N100Q3

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Manufacturer part number:IXFX32N100Q3

Manufacturer:IXYS

Description:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/32A

Case Package:SOT-23

Datasheet:IXFX32N100Q3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	20 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	247
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2012
Series	HiPerFET™
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	1250W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.25kW
Case Connection	DRAIN
Turn On Delay Time	45 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	320m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	6.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	9940pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	195nC @ 10V
Rise Time	250ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Turn-Off Delay Time	54 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.32Ohm
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	96A
Height	21.34mm
Length	16.13mm
Width	5.21mm
RoHS Status	ROHS3 Compliant