IXFX32N80P

new-10%

Manufacturer part number:IXFX32N80P

Manufacturer:IXYS

Description:MOSFET N-CH 800V 32A PLUS247

Case Package:SOT-23

Datasheet:IXFX32N80P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	30 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	HiPerFET™, PolarHT™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	830W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	830W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	270m Ω @ 16A, 10V
Vgs(th) (Max) @ Id	5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	32A Tc
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Rise Time	24ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	24 ns
Turn-Off Delay Time	85 ns
Continuous Drain Current (ID)	32A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.27Ohm
Drain to Source Breakdown Voltage	800V
Avalanche Energy Rating (Eas)	2000 mJ
RoHS Status	ROHS3 Compliant