TK8A50D(STA4,Q,M)

new-10%

Manufacturer part number:TK8A50D(STA4,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 500V 8A TO220SIS

Case Package:SOT-23

Datasheet:TK8A50D(STA4,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tube
Published	2010
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	40W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	850m Ω @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	800pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8A Ta
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Rise Time	20ns
Drain to Source Voltage (Vdss)	500V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	12 ns
Continuous Drain Current (ID)	8A
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	8A
Drain-source On Resistance-Max	0.85Ohm
DS Breakdown Voltage-Min	500V
Avalanche Energy Rating (Eas)	165 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant