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FQAF10N80

  • FQAF10N80
  • FQAF10N80

FQAF10N80

FQAF10N80

ON Semiconductor

Trans MOSFET N-CH 800V 6.7A 3-Pin(3+Tab) TO-3PF Rail

SOT-23

FQAF10N80 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-3P-3 Full Pack
Supplier Device Package TO-3PF
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
Series QFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 113W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.05Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
Current - Continuous Drain (Id) @ 25°C 6.7A Tc
Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.67000 $1.67
500 $1.6533 $826.65
1000 $1.6366 $1636.6
1500 $1.6199 $2429.85
2000 $1.6032 $3206.4
2500 $1.5865 $3966.25

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