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IXFX64N60P

IXFX64N60P

IXFX64N60P

IXYS

MOSFET (Metal Oxide) N-Channel Tube 96m Ω @ 500mA, 10V ±30V 12000pF @ 25V 200nC @ 10V TO-247-3

SOT-23

IXFX64N60P Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series HiPerFET™, PolarHT™
Published 2006
JESD-609 Code e1
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 96MOhm
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureAVALANCHE RATED
Voltage - Rated DC 600V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Current Rating64A
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Power Dissipation-Max 1040W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation1.04kW
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 96m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
Rise Time23ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 24 ns
Turn-Off Delay Time 79 ns
Continuous Drain Current (ID) 64A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 150A
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:342 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$14.008659$14.008659
10$13.215716$132.15716
100$12.467657$1246.7657
500$11.761940$5880.97
1000$11.096170$11096.17

IXFX64N60P Product Details

IXFX64N60P Description


IXFX64N60P is a 600v PolarHVTM HiPerFET Power MOSFET. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IXFX64N60P in the TO-247-3 package with 1040W power dissipation. It is applied to many fields, like Automotive, Body electronics & lighting, Communications equipment, Wired networking, Industrial, and Motor drives.



IXFX64N60P Features


International standard packages

Fast recovery diode

Unclamped Inductive Switching (UIS) rated

Low package inductance - easy to drive and protect



IXFX64N60P Applications


Automotive

Body electronics & lighting

Communications equipment

Wired networking

Industrial

Motor drives


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