IXFZ520N075T2

new-10%

Manufacturer part number:IXFZ520N075T2

Manufacturer:IXYS

Description:MOSFET N-CH 75V 465A DE-475

Case Package:SOT-23

Datasheet:IXFZ520N075T2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	26 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	DE475
Number of Pins	475
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	GigaMOS™, TrenchT2™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	6
JESD-30 Code	R-PDFP-F6
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	600W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.3m Ω @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	41000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	465A Tc
Gate Charge (Qg) (Max) @ Vgs	545nC @ 10V
Drain to Source Voltage (Vdss)	75V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	465A
Drain-source On Resistance-Max	0.0013Ohm
Pulsed Drain Current-Max (IDM)	1560A
DS Breakdown Voltage-Min	75V
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	ROHS3 Compliant