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2N7002NXBKR

  • 2N7002NXBKR
  • 2N7002NXBKR

2N7002NXBKR

2N7002NXBKR

Nexperia USA Inc.

2N7002NXBKR datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

2N7002NXBKR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 310mW Ta 1.67W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 2.8 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 23.6pF @ 10V
Current - Continuous Drain (Id) @ 25°C 270mA Ta 330mA Tc
Gate Charge (Qg) (Max) @ Vgs 1nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 5V 10V
Vgs (Max) ±20V
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.22000 $0.22
500 $0.2178 $108.9
1000 $0.2156 $215.6
1500 $0.2134 $320.1
2000 $0.2112 $422.4
2500 $0.209 $522.5
2N7002NXBKR Product Details

2N7002NXBKR Description


The 2N7002NXBKR is a 60 V, N-channel Trench MOSFET. N-channel augmentation mode Trench MOSFET technology is used to create a Field-Effect Transistor (FET) in a tiny SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic container.



2N7002NXBKR Features


  • Trench MOSFET technology

  • ElectroStatic Discharge (ESD) protection > 2 kV HBM

  • Logic-level compatible

  • Very fast switching



2N7002NXBKR Applications


  • Low-side load switch

  • Switching circuits

  • Relay driver

  • High-speed line driver


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