Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight	1.59999g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2002
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	PURE TIN
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	150W
Terminal Position	SINGLE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	IXG*20N120
Pin Count	4
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	150W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5V
Max Collector Current	40A
JEDEC-95 Code	TO-263AA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	61 ns
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 20A
Turn Off Time-Nom (toff)	720 ns
Gate Charge	63nC
Td (on/off) @ 25°C	28ns/400ns
Switching Energy	6.5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
RoHS Status	ROHS3 Compliant

Quantity	Unit Price	Ext. Price
50	$6.52200	$326.1

IXGA20N120B

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