STGB7NC60HDT4

new-10%

STGB7NC60HDT4

Manufacturer part number:STGB7NC60HDT4

Manufacturer:STMicroelectronics

Description:STGB7NC60HDT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB7NC60HDT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 7 months ago)
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	80W
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Current Rating	14A
[email protected] Reflow Temperature-Max (s)	30
Base Part Number	STGB7
Pin Count	4
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	25W
Input Type	Standard
Turn On Delay Time	18.5 ns
Power - Max	80W
Transistor Application	POWER CONTROL
Rise Time	8.5ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	72 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	25A
Reverse Recovery Time	37 ns
Collector Emitter Breakdown Voltage	600V
Collector Emitter Saturation Voltage	2.5V
Max Breakdown Voltage	600V
Turn On Time	25.5 ns
Test Condition	390V, 7A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 7A
Turn Off Time-Nom (toff)	221 ns
Gate Charge	35nC
Current - Collector Pulsed (Icm)	50A
Td (on/off) @ 25°C	18.5ns/72ns
Switching Energy	95μJ (on), 115μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5.75V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free